Quantum tunneling results in record transistor performance

MOSFETs (metal-oxide semiconductor field-effect transistors), the building blocks of today’s digital technology, require supply voltage of around one volt to gradually turn on the transistor. The current transistor technology faces inherent limits to reducing the power demand in electronic circuits due to physical laws related to the MOSFET design. Meanwhile, power demand will increase as the size of next generation transistors decreases and more devices are packed onto a computer chip. In a paper to be delivered at the International Electron Devices Meeting in Washington DC on December 7th, Penn State doctoral candidate Dheeraj Mohata will discuss a new materials and device architecture that provides power savings and instant transistor on-off capability for future electronics. The paper, titled “Demonstration of MOSFET-Like On-Current Performance in Arsenide/Antimonide Tunnel FETs with Staggered Hetero-junctions for 300mV Logic Applications,” reports the fabrication of a heterojunction field effect tunnel transistor with a 650% increase in drive current.

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